28C256 DATASHEET PDF

28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. [1]. A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.

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Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. After setting SDP, any attempt to dwtasheet to the device with- out the 3-byte command sequence will start the internal write timers.

When enabled, the software data protection SDPwill prevent inadvertent writes. For each WE high to low transition during the page write operation, A6 – A14 must be the same.

A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 63 addi- tional bytes. Manufac- tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to ns with power dissipation of just mW. This is done by pre- ceding the data to 28d256 written by the same 3-byte command sequence used to enable SDP. A software controlled data protection feature has been implemented on the AT28C Hardware features protect against inadvertent writes to the AT28C in the follow- ing ways: Fast Read Access Time – ns.

The bytes dataheet be loaded in dstasheet order and may be altered within the same load period. All command se- quences must conform to 2c8256 page write timing specifica- tions.

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All Output Voltages with Respect to Ground PROM for device identification or tracking. Reading the toggle bit may begin at any time during the write cycle.

The page write operation of the AT28C allows 1 to bytes of data to be written into the device 82c256 a single internal programming period. The data in the enable and disable command se- quences is not written to the device and the memory ad- dresses used in the sequence may be written with data in either a byte or page write operation.

No data will be written to the device; however, for the duration of t. The outputs are put in the high impedance state when either CE or OE is high. All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs. Hardware 28v256 Software Data Protection.

It should be noted, that once protected the host may still perform a byte or page write to the AT28C CE to Output Delay. During a write cycle, the addresses and 1 to bytes of data are internally latched, freeing the address and data bus for other opera- tions.

The device utilizes internal error correction for extended endurance and improved data retention characteristics. The entire device can be erased using a 6-byte software code.

When the device is deselected, the CMOS standby current is less than Input Test Waveforms and Measurement Level.

28C256 – 28C256 256K 250ns Parallel EEPROM Technical Data

Search field Part name Part description. Atmel has incorporated both hardware and software features that will protect the memory against inadvertent writes. OE may be delayed up to t. This dual- line control gives designers flexibility in preventing bus datashdet in their system.

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28C 데이터시트(PDF) – ATMEL Corporation

The data is latched by the first rising edge of CE or WE. Each successive byte must be written within The device also includes an extra bytes of E. Automatic Page Write Operation. The address is latched on the falling edge of CE or WE, whichever occurs last. By raising A9 to 12V. CE may be delayed up to t. The A0 to A5 inputs are used to specify which bytes within the page are to be written. Fast Write Cycle Times.

Once a byte write has been started it will automatically time itself to completion. Please see Soft- ware Chip Erase application note for details. Page Write Cycle Time: Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.

Once set, SDP will remain active unless the disable com- mand sequence is issued.

PROM memory are available to the user for device. After writing the 3-byte command sequence and after t.

This is a stress rating only and functional operation of the device at datasheeh or any other conditions beyond those indi- cated in the operational sections of this specification is not implied. Its K of memory is organized as 32, words by 8 bits.

28C 데이터시트(PDF) – Xicor Inc.

If precautions are not taken, inad- vertent writes may occur during transitions of the host sys- tem power supply. Address to Output Delay. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.